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Phomopsis seed decay 1-1
Parent 1:PI417479
Parent 2:AP350
Heritability:0.51
Num loci tested:43
Percent Variation Explained:23
Trait name:Reaction to Diaporthe phaseolorum var sojae Infection

SourceAccession Number
Plant Trait OntologyTO:0000439

     
PSD 1-1

Berger and Minor 1999An RFLP marker associated with resistance to phomopsis seed decay in soybean PI 417479 
Crop Sci. 1999, 39(3):800-805

     
MapLGStartEnd
GmComposite2003_F F83.1785.17See this QTL region in Sequence Browser

A708_1Parent_123.8% decay
A708_1Parent_246.9% decay
A708_1Heterozygous31.4% decay
A708_1Phenotypic_R223.200001
A708_1P_value0.000100
A708_1Genetic_effectsDominant
A708_1Favorable_allele_sourcePI417479

F2 and F2:4

ParentTrait
PI417479Resistant
AP350Susceptible

A708_1

ANOVA

Data are for 1993; see reference for other years
Parent_1 is PI417479, Parent_2 is AP350
Study done by analysis of variance at locus; for purposes of display this was converted to an interval around that locus.
Phomopsis seed decay (PSD) is caused by members of the Diaporthe/Phomopsis genus.






Funded by the USDA-ARS. Developed by the USDA-ARS SoyBase and Legume Clade Database group at the Iowa State University, Ames, IA
 
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